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China2SB1274R-SA-ON
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SB1274R-SA-ON
BESCHREIBUNG
PNP EPITAXIAL PLANAR SILICON
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 60 V 3 A 100MHz 2 W Through Hole TO-220ML
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,902
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
3 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
1V @ 200mA, 2A
Current - Collector Cutoff (Max)
100µA
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 500mA, 5V
Power - Max
2 W
Frequency - Transition
100MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220ML
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0075
Andere Namen
2156-2SB1274R-SA-ON
ONSONS2SB1274R-SA
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SB1274R-SA-ON
Dokumente und Medien
Datasheets
1(2SB1274R)
Menge Preis
QUANTITÄT: 1902
Einzelpreis: $0.16
Verpackung: Bulk
MinMultiplikator: 1902
Verpackung: Bulk
MinMultiplikator: 1902
Stellvertreter
-