English
Spain
Rusia
Italy
ChinaFQD12N20TM
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQD12N20TM
BESCHREIBUNG
MOSFET N-CH 200V 9A DPAK
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 9A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount TO-252AA
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
onsemi
Series
QFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
280mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
910 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 55W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
-
Base Product Number
FQD12N20
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
FQD12N20TMFSCT
FQD12N20TMFSTR
FQD12N20TM-ND
FQD12N20TMFSDKR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQD12N20TM
Dokumente und Medien
Datasheets
1(FQD12N20, FQU12N20)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 30/Jun/2022)
PCN Design/Specification
()
PCN Assembly/Origin
1(Mult Dev 13/Aug/2020)
PCN Packaging
()
Menge Preis
-
Stellvertreter
Teil Nr. : FQD12N20LTM
Hersteller. : onsemi
Verfügbare Menge. : 0
Einzelpreis. : $7.07000
Ersatztyp. : MFR Recommended
Verfügbare Menge. : 0
Einzelpreis. : $7.07000
Ersatztyp. : MFR Recommended