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ChinaHGT1S12N60B3DS
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
HGT1S12N60B3DS
BESCHREIBUNG
27A, 600V, UFS N-CHANNEL IGBT W/
DETAILIERTE BESCHREIBUNG
IGBT 600 V 27 A 104 W Surface Mount TO-263AB
HERSTELLER
Harris Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
214
Lagerbestände
Technische Daten
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
27 A
Current - Collector Pulsed (Icm)
110 A
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 12A
Power - Max
104 W
Switching Energy
304µJ (on), 250µJ (off)
Input Type
Standard
Gate Charge
78 nC
Td (on/off) @ 25°C
26ns/150ns
Test Condition
480V, 12A, 25Ohm, 15V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263AB
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
2156-HGT1S12N60B3DS
HARHARHGT1S12N60B3DS
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/Harris Corporation HGT1S12N60B3DS
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 214
Einzelpreis: $1.4
Verpackung: Bulk
MinMultiplikator: 214
Verpackung: Bulk
MinMultiplikator: 214
Stellvertreter
-