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ChinaPSMN3R7-30YLC,115
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PSMN3R7-30YLC,115
BESCHREIBUNG
MOSFET N-CH 30V 100A LFPAK56
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 100A (Tc) 79W (Tc) Surface Mount LFPAK56, Power-SO8
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,500
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.95mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1848 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
79W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
LFPAK56, Power-SO8
Package / Case
SC-100, SOT-669
Base Product Number
PSMN3
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
568-6735-6
NEXNXPPSMN3R7-30YLC,115
568-6735-2
2156-PSMN3R7-30YLC115-NXTR
934065194115
954-PSMN3R7-30YLC115
568-6735-1
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PSMN3R7-30YLC,115
Dokumente und Medien
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 25/Dec/2013)
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
Menge Preis
-
Stellvertreter
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