English
Spain
Rusia
Italy
ChinaUF3SC120016K3S
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
UF3SC120016K3S
BESCHREIBUNG
SICFET N-CH 1200V 107A TO247-3
DETAILIERTE BESCHREIBUNG
N-Channel 1200 V 107A (Tc) 517W (Tc) Through Hole TO-247-3
HERSTELLER
Qorvo
STANDARD LEADTIME
44 Weeks
EDACAD-MODELL
STANDARDPAKET
30
Lagerbestände
Technische Daten
Mfr
Qorvo
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
107A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
12V
Rds On (Max) @ Id, Vgs
21mOhm @ 50A, 12V
Vgs(th) (Max) @ Id
6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
218 nC @ 15 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7824 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
517W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
UF3SC120016
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Qorvo UF3SC120016K3S
Dokumente und Medien
Datasheets
1(UF3SC120016K3S)
Video File
1(Minimizing EMI and switching loss for SiC FETs)
Environmental Information
()
PCN Design/Specification
1(Mult Dev A/T 4/Jun/2021)
PCN Assembly/Origin
1(Mult Dev A/T Chgs 4/Jun/2021)
HTML Datasheet
1(UF3SC120016K3S)
Menge Preis
QUANTITÄT: 120
Einzelpreis: $38.06492
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 30
Einzelpreis: $40.78367
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $48.67
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
Stellvertreter
-