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ChinaSUP50N03-5M1P-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SUP50N03-5M1P-GE3
BESCHREIBUNG
MOSFET N-CH 30V 50A TO220AB
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 50A (Tc) 2.7W (Ta), 59.5W (Tc) Through Hole TO-220AB
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
SUP50N03-5M1P-GE3 Models
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5.1mOhm @ 22A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
66 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2780 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.7W (Ta), 59.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
SUP50
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SUP50N03-5M1P-GE3CT-ND
SUP50N03-5M1P-GE3CT
SUP50N035M1PGE3
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SUP50N03-5M1P-GE3
Dokumente und Medien
Datasheets
()
PCN Obsolescence/ EOL
1(Commercial Mosfet OBS 29/Apr/2016)
HTML Datasheet
1(SUP50N03-5M1P-GE3)
EDA Models
1(SUP50N03-5M1P-GE3 Models)
Menge Preis
-
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