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ChinaH5N2007LSTL-E
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
H5N2007LSTL-E
BESCHREIBUNG
MOSFET N-CH HS SW TO-263
DETAILIERTE BESCHREIBUNG
25A (Tj)
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
-
Technology
-
Current - Continuous Drain (Id) @ 25°C
25A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
Vgs (Max)
-
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
-
Supplier Device Package
-
Package / Case
-
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation H5N2007LSTL-E
Dokumente und Medien
PCN Obsolescence/ EOL
1(Mult Dev EOL 15/Dec/2018)
PCN Packaging
1(Label Change-All Devices 01/Dec/2022)
Menge Preis
-
Stellvertreter
-