English
Spain
Rusia
Italy
ChinaIRF6662TRPBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRF6662TRPBF
BESCHREIBUNG
IRF6662 - 12V-300V N-CHANNEL POW
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 8.3A (Ta), 47A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ
HERSTELLER
International Rectifier
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
254
Lagerbestände
Technische Daten
Mfr
International Rectifier
Series
HEXFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
8.3A (Ta), 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
22mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id
4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1360 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ MZ
Package / Case
DirectFET™ Isometric MZ
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
2156-IRF6662TRPBF
INFIRFIRF6662TRPBF
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/International Rectifier IRF6662TRPBF
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 254
Einzelpreis: $1.19
Verpackung: Bulk
MinMultiplikator: 254
Verpackung: Bulk
MinMultiplikator: 254
Stellvertreter
-