Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IPD60R750E6ATMA1
BESCHREIBUNG
MOSFET N-CH 600V 5.7A TO252-3
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 5.7A (Tc) 48W (Tc) Surface Mount PG-TO252-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500

Technische Daten

Mfr
Infineon Technologies
Series
CoolMOS™ E6
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
750mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs
17.2 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
373 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
48W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD60R

Umweltverträgliche Exportklassifikationen

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

-

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD60R750E6ATMA1

Dokumente und Medien

Datasheets
1(IPx60R750E6)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPx60R750E6)
Simulation Models
1(CoolMOS™ Power MOSFET 600V E6 Spice Model)

Menge Preis

-

Stellvertreter

Teil Nr. : IPD60R600P6ATMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 4,899
Einzelpreis. : $1.45000
Ersatztyp. : Direct
Teil Nr. : FCD850N80Z
Hersteller. : onsemi
Verfügbare Menge. : 15,910
Einzelpreis. : $2.41000
Ersatztyp. : Direct
Teil Nr. : TK6P60W,RVQ
Hersteller. : Toshiba Semiconductor and Storage
Verfügbare Menge. : 1,999
Einzelpreis. : $1.93000
Ersatztyp. : Similar