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ChinaNTB65N02RT4G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NTB65N02RT4G
BESCHREIBUNG
MOSFET N-CH 25V 7.6A D2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 25 V 7.6A (Tc) 1.04W (Ta), 62.5W (Tc) Surface Mount D2PAK
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
NTB65N02RT4G Models
STANDARDPAKET
800
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.5 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1330 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
1.04W (Ta), 62.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
NTB65
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
NTB65N02RT4GOS
2156-NTB65N02RT4G
2156-NTB65N02RT4G-ONTR-ND
ONSONSNTB65N02RT4G
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTB65N02RT4G
Dokumente und Medien
Datasheets
1(NTB,NTP65N02R)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 19/Dec/2008)
HTML Datasheet
1(NTB,NTP65N02R)
EDA Models
1(NTB65N02RT4G Models)
Menge Preis
-
Stellvertreter
Teil Nr. : PSMN017-30BL,118
Hersteller. : Nexperia USA Inc.
Verfügbare Menge. : 1,868
Einzelpreis. : $1.08000
Ersatztyp. : Similar
Verfügbare Menge. : 1,868
Einzelpreis. : $1.08000
Ersatztyp. : Similar
Teil Nr. : PSMN4R3-30BL,118
Hersteller. : Nexperia USA Inc.
Verfügbare Menge. : 10,745
Einzelpreis. : $1.57000
Ersatztyp. : Similar
Verfügbare Menge. : 10,745
Einzelpreis. : $1.57000
Ersatztyp. : Similar