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Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SD864K
BESCHREIBUNG
POWER BIPOLAR TRANSISTOR, 3A, 12
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN - Darlington 120 V 3 A 30 W Through Hole TO-220ABS
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
187
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
3 A
Voltage - Collector Emitter Breakdown (Max)
120 V
Vce Saturation (Max) @ Ib, Ic
3V @ 30mA, 3A
Current - Collector Cutoff (Max)
10µA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 1.5A, 3V
Power - Max
30 W
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220ABS
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
RENRNS2SD864K
2156-2SD864K
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SD864K
Dokumente und Medien
Datasheets
1(2SD864K Datasheet)
Menge Preis
QUANTITÄT: 187
Einzelpreis: $1.61
Verpackung: Bulk
MinMultiplikator: 187
Verpackung: Bulk
MinMultiplikator: 187
Stellvertreter
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