Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IPA126N10N3GXKSA1
BESCHREIBUNG
MOSFET N-CH 100V 35A TO220-FP
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 35A (Tc) 33W (Tc) Through Hole PG-TO220 Full Pack
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500

Technische Daten

Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
12.6mOhm @ 35A, 10V
Vgs(th) (Max) @ Id
3.5V @ 45µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2500 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
33W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220 Full Pack
Package / Case
TO-220-3 Full Pack

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

SP000485964
IPA126N10N3 G-ND
IPA126N10N3 G
IPA1-ND26N10N3GXKSA1-ND
IPA26N10N3GXKSA1-ND
IPA126N10N3G
2156-IPA126N10N3GXKSA1-448

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPA126N10N3GXKSA1

Dokumente und Medien

Datasheets
1(IPA126N10N3 G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPA126N10N3 G)
Simulation Models
1(MOSFET OptiMOS™ 100V N-Channel Spice Model)

Menge Preis

-

Stellvertreter

Teil Nr. : IPA126N10NM3SXKSA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 497
Einzelpreis. : $1.79000
Ersatztyp. : Direct
Teil Nr. : FQPF70N10
Hersteller. : onsemi
Verfügbare Menge. : 1,000
Einzelpreis. : $2.54000
Ersatztyp. : Similar