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ChinaATP101-TL-HX
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
ATP101-TL-HX
BESCHREIBUNG
MOSFET P-CH 30V 25A ATPAK
DETAILIERTE BESCHREIBUNG
P-Channel 30 V 25A (Ta) 30W (Tc) Surface Mount ATPAK
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
25A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
30mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
18.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
875 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
30W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
ATPAK
Package / Case
ATPAK (2 Leads+Tab)
Base Product Number
ATP101
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi ATP101-TL-HX
Dokumente und Medien
Environmental Information
()
PCN Obsolescence/ EOL
1(EOL 18/Oct/2016)
Menge Preis
-
Stellvertreter
-