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ChinaFQAF6N80
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQAF6N80
BESCHREIBUNG
MOSFET N-CH 800V 4.4A TO3PF
DETAILIERTE BESCHREIBUNG
N-Channel 800 V 4.4A (Tc) 90W (Tc) Through Hole TO-3PF
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
173
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.95Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
90W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PF
Package / Case
TO-3P-3 Full Pack
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
FAIFSCFQAF6N80
2156-FQAF6N80-FS
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQAF6N80
Dokumente und Medien
Datasheets
1(FQAF6N80)
Menge Preis
QUANTITÄT: 173
Einzelpreis: $1.74
Verpackung: Tube
MinMultiplikator: 173
Verpackung: Tube
MinMultiplikator: 173
Stellvertreter
-