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ChinaNTD5862N-1G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NTD5862N-1G
BESCHREIBUNG
MOSFET N-CH 60V 98A DPAK
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 98A (Tc) 115W (Tc) Surface Mount DPAK
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
NTD5862N-1G Models
STANDARDPAKET
75
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
98A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5.7mOhm @ 45A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
82 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
115W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
NTD58
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
ONSONSNTD5862N-1G
2156-NTD5862N-1G-ON
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTD5862N-1G
Dokumente und Medien
Datasheets
1(NTD5862N)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 05/Apr/2014)
HTML Datasheet
1(NTD5862N)
EDA Models
1(NTD5862N-1G Models)
Menge Preis
-
Stellvertreter
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