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ChinaFQP2NA90
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQP2NA90
BESCHREIBUNG
MOSFET N-CH 900V 2.8A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 900 V 2.8A (Tc) 107W (Tc) Through Hole TO-220-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
523
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5.8Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
680 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
107W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-FQP2NA90-FS
FAIFSCFQP2NA90
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQP2NA90
Dokumente und Medien
Datasheets
1(FQP2NA90)
Menge Preis
QUANTITÄT: 523
Einzelpreis: $0.57
Verpackung: Tube
MinMultiplikator: 523
Verpackung: Tube
MinMultiplikator: 523
Stellvertreter
-