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ChinaMT29E3T08EUHBBM4-3ES:B TR
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TEILNUMMER DES HERSTELLERS
MT29E3T08EUHBBM4-3ES:B TR
BESCHREIBUNG
IC FLASH 3TBIT PARALLEL 333MHZ
DETAILIERTE BESCHREIBUNG
FLASH - NAND Memory IC 3Tbit Parallel 333 MHz
HERSTELLER
Micron Technology Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Micron Technology Inc.
Series
-
Package
Tape & Reel (TR)
Product Status
Active
allaboutcomponents.com Programmable
Not Verified
Memory Type
Non-Volatile
Memory Format
FLASH
Technology
FLASH - NAND
Memory Size
3Tbit
Memory Organization
384G x 8
Memory Interface
Parallel
Clock Frequency
333 MHz
Write Cycle Time - Word, Page
-
Voltage - Supply
2.5V ~ 3.6V
Operating Temperature
0°C ~ 70°C (TA)
Mounting Type
-
Package / Case
-
Supplier Device Package
-
Base Product Number
MT29E3T08
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
3A991B1A
HTSUS
8542.32.0071
Andere Namen
MT29E3T08EUHBBM4-3ES:BTR
MT29E3T08EUHBBM4-3ES:B TR-ND
Kategorie
/Product Index/Integrated Circuits (ICs)/Memory/Memory/Micron Technology Inc. MT29E3T08EUHBBM4-3ES:B TR
Dokumente und Medien
PCN Packaging
1(Memory 24-May-2022)
Menge Preis
-
Stellvertreter
-