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ChinaIRFH6200TR2PBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFH6200TR2PBF
BESCHREIBUNG
MOSFET N-CH 20V 100A 5X6 PQFN
DETAILIERTE BESCHREIBUNG
N-Channel 20 V 49A (Ta), 100A (Tc) Surface Mount 8-PQFN (5x6)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
400
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Cut Tape (CT)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
49A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs
0.95mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
1.1V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
230 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
10890 pF @ 10 V
FET Feature
-
Mounting Type
Surface Mount
Supplier Device Package
8-PQFN (5x6)
Package / Case
8-PowerVDFN
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IRFH6200TR2PBFTR
IRFH6200TR2PBFDKR
IRFH6200TR2PBFCT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFH6200TR2PBF
Dokumente und Medien
Datasheets
1(IRFH6200PBF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Environmental Information
1(PQFN 5x6 RoHS Compliance)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRFH6200PBF)
Simulation Models
1(IRFH6200TR2PBF Saber Model)
Menge Preis
-
Stellvertreter
Teil Nr. : SIR404DP-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 28,147
Einzelpreis. : $1.94000
Ersatztyp. : Similar
Verfügbare Menge. : 28,147
Einzelpreis. : $1.94000
Ersatztyp. : Similar