Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
SIHB22N60EL-GE3
BESCHREIBUNG
MOSFET N-CH 600V 21A TO263
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 21A (Tc) 227W (Tc) Surface Mount TO-263 (D2PAK)
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
28 Weeks
EDACAD-MODELL
STANDARDPAKET

Technische Daten

Mfr
Vishay Siliconix
Series
-
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
197mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
74 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1690 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
227W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SIHB22

Umweltverträgliche Exportklassifikationen

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

-

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHB22N60EL-GE3

Dokumente und Medien

Datasheets
1(SIHB22N60EL)
HTML Datasheet
1(SIHB22N60EL)

Menge Preis

QUANTITÄT: 3000
Einzelpreis: $2.08464
Verpackung: Tape & Reel (TR)
MinMultiplikator: 3000

Stellvertreter

Teil Nr. : IXTA24N65X2
Hersteller. : IXYS
Verfügbare Menge. : 50
Einzelpreis. : $5.50000
Ersatztyp. : Similar