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ChinaIRFSL4020PBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFSL4020PBF
BESCHREIBUNG
MOSFET N-CH 200V 18A TO262
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 18A (Tc) 100W (Tc) Through Hole TO-262
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
105mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
100W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFSL4020PBF
Dokumente und Medien
Datasheets
1(IRFS(L)4020PBF)
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HTML Datasheet
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Menge Preis
-
Stellvertreter
Teil Nr. : IRF640NLPBF
Hersteller. : Infineon Technologies
Verfügbare Menge. : 998
Einzelpreis. : $1.78000
Ersatztyp. : Similar
Verfügbare Menge. : 998
Einzelpreis. : $1.78000
Ersatztyp. : Similar