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ChinaJANTXV2N6770
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
JANTXV2N6770
BESCHREIBUNG
MOSFET N-CH 500V 12A TO204AE
DETAILIERTE BESCHREIBUNG
N-Channel 500 V 12A (Tc) 4W (Ta), 150W (Tc) Through Hole TO-204AE (TO-3)
HERSTELLER
Microsemi Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
500mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 10 V
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
4W (Ta), 150W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
Military
Qualification
MIL-PRF-19500/543
Mounting Type
Through Hole
Supplier Device Package
TO-204AE (TO-3)
Package / Case
TO-204AE
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
JANTXV2N6770-MIL
JANTXV2N6770-ND
150-JANTXV2N6770
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microsemi Corporation JANTXV2N6770
Dokumente und Medien
Datasheets
1(2N6764,66,68,70)
Environmental Information
()
PCN Obsolescence/ EOL
()
HTML Datasheet
1(2N6764,66,68,70)
Menge Preis
-
Stellvertreter
-