Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
TSM22P10CZ C0G
BESCHREIBUNG
MOSFET P-CH 100V 22A TO220
DETAILIERTE BESCHREIBUNG
P-Channel 100 V 22A (Tc) 125W (Tc) Through Hole TO-220
HERSTELLER
Taiwan Semiconductor Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1

Technische Daten

Mfr
Taiwan Semiconductor Corporation
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
140mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
2250 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

-

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Taiwan Semiconductor Corporation TSM22P10CZ C0G

Dokumente und Medien

Datasheets
1(TSM22P10Cx C0G)
Environmental Information
()
HTML Datasheet
1(TSM22P10Cx C0G)

Menge Preis

-

Stellvertreter

Teil Nr. : IRF9540NPBF
Hersteller. : Infineon Technologies
Verfügbare Menge. : 9,320
Einzelpreis. : $1.39000
Ersatztyp. : Similar