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ChinaIXTH30N60L2
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IXTH30N60L2
BESCHREIBUNG
MOSFET N-CH 600V 30A TO247
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 30A (Tc) 540W (Tc) Through Hole TO-247 (IXTH)
HERSTELLER
IXYS
STANDARD LEADTIME
98 Weeks
EDACAD-MODELL
IXTH30N60L2 Models
STANDARDPAKET
30
Lagerbestände
Technische Daten
Mfr
IXYS
Series
Linear L2™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
240mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
335 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
10700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
540W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247 (IXTH)
Package / Case
TO-247-3
Base Product Number
IXTH30
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTH30N60L2
Dokumente und Medien
Datasheets
1(IXT(H,Q,T)30N60L2)
Environmental Information
1(Ixys IC REACH)
Featured Product
1(Linear L2™ MOSFETs)
HTML Datasheet
1(IXT(H,Q,T)30N60L2)
EDA Models
1(IXTH30N60L2 Models)
Menge Preis
QUANTITÄT: 500
Einzelpreis: $13.41014
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 100
Einzelpreis: $14.7974
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 10
Einzelpreis: $17.109
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $19.42
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
Stellvertreter
-