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ChinaIRLI620G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRLI620G
BESCHREIBUNG
MOSFET N-CH 200V 4A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 4A (Tc) 30W (Tc) Through Hole TO-220-3
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 5V
Rds On (Max) @ Id, Vgs
800mOhm @ 2.4A, 5V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
360 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
30W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3 Full Pack, Isolated Tab
Base Product Number
IRLI620
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRLI620G
Dokumente und Medien
HTML Datasheet
1(IRLI620G, SiHLI620G)
Menge Preis
-
Stellvertreter
Teil Nr. : RCX081N20
Hersteller. : Rohm Semiconductor
Verfügbare Menge. : 136
Einzelpreis. : $1.07000
Ersatztyp. : Similar
Verfügbare Menge. : 136
Einzelpreis. : $1.07000
Ersatztyp. : Similar