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ChinaMSC025SMA120B
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TEILNUMMER DES HERSTELLERS
MSC025SMA120B
BESCHREIBUNG
SICFET N-CH 1.2KV 103A TO247-3
DETAILIERTE BESCHREIBUNG
N-Channel 1200 V 103A (Tc) 500W (Tc) Through Hole TO-247-3
HERSTELLER
Microchip Technology
STANDARD LEADTIME
38 Weeks
EDACAD-MODELL
MSC025SMA120B Models
STANDARDPAKET
30
Lagerbestände
Technische Daten
Mfr
Microchip Technology
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
103A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id
2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
232 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
3020 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
500W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
MSC025
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microchip Technology MSC025SMA120B
Dokumente und Medien
Datasheets
1(MSC025SMA120B)
Environmental Information
()
Featured Product
1(Microchip Technology - Silicon Carbide Semiconductor Discrete Products)
PCN Design/Specification
1(Top Marking Changes 22/Feb/2023)
PCN Assembly/Origin
1(Mult Dev 05/Dec/2023)
PCN Packaging
1(Label Change 03/Jan/2023)
HTML Datasheet
1(MSC025SMA120B)
EDA Models
1(MSC025SMA120B Models)
Menge Preis
QUANTITÄT: 100
Einzelpreis: $30.2401
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 25
Einzelpreis: $37.01
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $40.13
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
Stellvertreter
-