English
Spain
Rusia
Italy
ChinaIPD600N25N3GBTMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPD600N25N3GBTMA1
BESCHREIBUNG
MOSFET N-CH 250V 25A TO252-3
DETAILIERTE BESCHREIBUNG
N-Channel 250 V 25A (Tc) 136W (Tc) Surface Mount PG-TO252-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2350 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
136W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
-
Base Product Number
IPD600N
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SP000676404
IPD600N25N3G
IPD600N25N3 GTR
IPD600N25N3 GTR-ND
IPD600N25N3 GDKR-ND
IPD600N25N3 G-ND
IPD600N25N3 GCT
IPD600N25N3 GDKR
IPD600N25N3 G
IPD600N25N3 GCT-ND
IPD600N25N3GBTMA1CT
IPD600N25N3GBTMA1DKR
IPD600N25N3GBTMA1TR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD600N25N3GBTMA1
Dokumente und Medien
Datasheets
1(IPD600N25N3G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Packaging
()
Menge Preis
-
Stellvertreter
Teil Nr. : IPD600N25N3GATMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 0
Einzelpreis. : $2.89000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 0
Einzelpreis. : $2.89000
Ersatztyp. : Parametric Equivalent