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ChinaSGF80N60UFTU
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TEILNUMMER DES HERSTELLERS
SGF80N60UFTU
BESCHREIBUNG
IGBT, 80A, 600V, N-CHANNEL
DETAILIERTE BESCHREIBUNG
IGBT 600 V 80 A 110 W Through Hole TO-3PF
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
59
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Active
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
80 A
Current - Collector Pulsed (Icm)
220 A
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 40A
Power - Max
110 W
Switching Energy
570µJ (on), 590µJ (off)
Input Type
Standard
Gate Charge
175 nC
Td (on/off) @ 25°C
23ns/90ns
Test Condition
300V, 40A, 5Ohm, 15V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3 Full Pack
Supplier Device Package
TO-3PF
Base Product Number
SGF80N60
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
2156-SGF80N60UFTU
FAIFSCSGF80N60UFTU
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/Fairchild Semiconductor SGF80N60UFTU
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 59
Einzelpreis: $5.15
Verpackung: Bulk
MinMultiplikator: 59
Verpackung: Bulk
MinMultiplikator: 59
Stellvertreter
-