Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IRFR110ATM
BESCHREIBUNG
N-CHANNEL POWER MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 4.7A (Ta) 2.5W (Ta), 20W (Tc) Surface Mount DPAK
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,110

Technische Daten

Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
4.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
400mOhm @ 2.35A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
240 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 20W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

2156-IRFR110ATM
FAIFSCIRFR110ATM

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor IRFR110ATM

Dokumente und Medien

Datasheets
1(Datasheet)

Menge Preis

QUANTITÄT: 1110
Einzelpreis: $0.27
Verpackung: Bulk
MinMultiplikator: 1110

Stellvertreter

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