Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IRF6775MTRPBF
BESCHREIBUNG
IRF6775 - 12V-300V N-CHANNEL POW
DETAILIERTE BESCHREIBUNG
N-Channel 150 V 4.9A (Ta), 28A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ
HERSTELLER
International Rectifier
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
249

Technische Daten

Mfr
International Rectifier
Series
HEXFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
4.9A (Ta), 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
56mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id
5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1411 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ MZ
Package / Case
DirectFET™ Isometric MZ

Umweltverträgliche Exportklassifikationen

ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

2156-IRF6775MTRPBF
INFIRFIRF6775MTRPBF

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/International Rectifier IRF6775MTRPBF

Dokumente und Medien

Datasheets
1(Datasheet)

Menge Preis

QUANTITÄT: 249
Einzelpreis: $1.21
Verpackung: Bulk
MinMultiplikator: 249

Stellvertreter

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