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ChinaBUJ303B,127
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TEILNUMMER DES HERSTELLERS
BUJ303B,127
BESCHREIBUNG
NOW WEEN - BUJ303B - POWER BIPOL
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 400 V 5 A 100 W Through Hole TO-220AB
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
859
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
5 A
Voltage - Collector Emitter Breakdown (Max)
400 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1A, 3A
Current - Collector Cutoff (Max)
100µA
DC Current Gain (hFE) (Min) @ Ic, Vce
23 @ 800mA, 3V
Power - Max
100 W
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-BUJ303B,127
WENNXPBUJ303B,127
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/NXP USA Inc. BUJ303B,127
Dokumente und Medien
Datasheets
1(BUJ303B,127 Datasheet)
Menge Preis
QUANTITÄT: 859
Einzelpreis: $0.35
Verpackung: Bulk
MinMultiplikator: 859
Verpackung: Bulk
MinMultiplikator: 859
Stellvertreter
-