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China2SD1348SC-T-ND
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TEILNUMMER DES HERSTELLERS
2SD1348SC-T-ND
BESCHREIBUNG
BIP NPN 4A 50V
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 50 V 4 A 150MHz 1.2 W Through Hole TO-126
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,025
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 2A
Current - Collector Cutoff (Max)
1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 100mA, 2V
Power - Max
1.2 W
Frequency - Transition
150MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0075
Andere Namen
2156-2SD1348SC-T-ND
ONSONS2SD1348SC-T-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SD1348SC-T-ND
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
-
Stellvertreter
-