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ChinaBUL416T
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BUL416T
BESCHREIBUNG
TRANS NPN 800V 6A TO220
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 800 V 6 A 110 W Through Hole TO-220
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
EDACAD-MODELL
BUL416T Models
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
STMicroelectronics
Series
-
Package
Tube
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
6 A
Voltage - Collector Emitter Breakdown (Max)
800 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1.33A, 4A
Current - Collector Cutoff (Max)
250µA
DC Current Gain (hFE) (Min) @ Ic, Vce
18 @ 700mA, 5V
Power - Max
110 W
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220
Base Product Number
BUL416
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/STMicroelectronics BUL416T
Dokumente und Medien
Datasheets
1(BUL416T)
Other Related Documents
1(BUL416T View All Specifications)
PCN Obsolescence/ EOL
1(Obsolete Notice 14/Sep/2022)
HTML Datasheet
1(BUL416T)
EDA Models
1(BUL416T Models)
Menge Preis
-
Stellvertreter
-