Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
95 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds
1825 pF @ 800 V
Power Dissipation (Max)
179W (Tc)
Operating Temperature
-55°C ~ 150°C
Mounting Type
Through Hole
Supplier Device Package
TO-247AD
Base Product Number
LSIC1MO120