English
Spain
Rusia
Italy
ChinaIRFW610BTMFP001
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFW610BTMFP001
BESCHREIBUNG
N-CHANNEL POWER MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 3.3A (Tc) 3.13W (Ta), 38W (Tc) Surface Mount D2PAK
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
423
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 1.65A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.3 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
225 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 38W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-IRFW610BTMFP001
FAIFSCIRFW610BTMFP001
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor IRFW610BTMFP001
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 423
Einzelpreis: $0.71
Verpackung: Bulk
MinMultiplikator: 423
Verpackung: Bulk
MinMultiplikator: 423
Stellvertreter
-