Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IXFR180N10
BESCHREIBUNG
MOSFET N-CH 100V 165A ISOPLUS247
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 165A (Tc) 400W (Tc) Through Hole ISOPLUS247™
HERSTELLER
IXYS
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
30

Technische Daten

Mfr
IXYS
Series
HiPerFET™
Package
Tube
Product Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
165A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
8mOhm @ 90A, 10V
Vgs(th) (Max) @ Id
4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
400 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
9400 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
400W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
ISOPLUS247™
Package / Case
TO-247-3
Base Product Number
IXFR180

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65

Andere Namen

-

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFR180N10

Dokumente und Medien

Datasheets
1(IXFR180N10)
Environmental Information
1(Ixys IC REACH)
PCN Obsolescence/ EOL
1(Mult Devices OBS 24/Feb/2014)
HTML Datasheet
1(IXFR180N10)

Menge Preis

QUANTITÄT: 30
Einzelpreis: $15.12667
Verpackung: Tube
MinMultiplikator: 30

Stellvertreter

Teil Nr. : HUF75652G3
Hersteller. : onsemi
Verfügbare Menge. : 0
Einzelpreis. : $9.64000
Ersatztyp. : Similar