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TEILNUMMER DES HERSTELLERS
SDP10S30
BESCHREIBUNG
DIODE SIL CARB 300V 10A TO220-3
DETAILIERTE BESCHREIBUNG
Diode 300 V 10A Through Hole PG-TO220-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolSiC™+
Package
Tube
Product Status
Obsolete
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
300 V
Current - Average Rectified (Io)
10A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 10 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
200 µA @ 300 V
Capacitance @ Vr, F
600pF @ 0V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
PG-TO220-3
Operating Temperature - Junction
-55°C ~ 175°C
Base Product Number
SDP10S
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.10.0080
Andere Namen
SDP10S30XK
SDP10S30X
SP000013359
Kategorie
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/Infineon Technologies SDP10S30
Dokumente und Medien
Datasheets
1(SDP10S30, SDT10S30)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Power Factor Correction)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(SDP10S30, SDT10S30)
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