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ChinaIRLHM630TR2PBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRLHM630TR2PBF
BESCHREIBUNG
MOSFET N-CH 30V 21A PQFN
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 21A (Ta), 40A (Tc) Surface Mount PQFN (3x3)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
400
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Cut Tape (CT)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
21A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs
3.5mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
62 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
3170 pF @ 25 V
FET Feature
-
Mounting Type
Surface Mount
Supplier Device Package
PQFN (3x3)
Package / Case
8-VQFN Exposed Pad
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SP001550422
IRLHM630TR2PBFCT
IRLHM630TR2PBFTR
IRLHM630TR2PBFDKR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRLHM630TR2PBF
Dokumente und Medien
Datasheets
1(IRLHM630PbF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRLHM630PbF)
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