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ChinaFDMS3606AS
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TEILNUMMER DES HERSTELLERS
FDMS3606AS
BESCHREIBUNG
MOSFET 2N-CH 30V 13A/27A 8PQFN
DETAILIERTE BESCHREIBUNG
Mosfet Array 30V 13A, 27A 1W Surface Mount 8-PQFN (5x6)
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
254
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual) Asymmetrical
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
13A, 27A
Rds On (Max) @ Id, Vgs
8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1695pF @ 15V
Power - Max
1W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
8-PQFN (5x6)
Base Product Number
FDMS3606
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
FAIFSCFDMS3606AS
2156-FDMS3606AS
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Fairchild Semiconductor FDMS3606AS
Dokumente und Medien
Datasheets
1(FDMS3606AS Datasheet)
Menge Preis
QUANTITÄT: 254
Einzelpreis: $1.19
Verpackung: Bulk
MinMultiplikator: 254
Verpackung: Bulk
MinMultiplikator: 254
Stellvertreter
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