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TEILNUMMER DES HERSTELLERS
FGA50N100BNTTU
BESCHREIBUNG
IGBT 1000V 50A 156W TO3P
DETAILIERTE BESCHREIBUNG
IGBT NPT and Trench 1000 V 50 A 156 W Through Hole TO-3P
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
FGA50N100BNTTU Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
IGBT Type
NPT and Trench
Voltage - Collector Emitter Breakdown (Max)
1000 V
Current - Collector (Ic) (Max)
50 A
Current - Collector Pulsed (Icm)
200 A
Vce(on) (Max) @ Vge, Ic
2.9V @ 15V, 60A
Power - Max
156 W
Switching Energy
-
Input Type
Standard
Gate Charge
257 nC
Td (on/off) @ 25°C
34ns/243ns
Test Condition
600V, 60A, 10Ohm, 15V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3P
Base Product Number
FGA50
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/onsemi FGA50N100BNTTU
Dokumente und Medien
Datasheets
1(FGA50N100BNT)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 27/Feb/2012)
HTML Datasheet
1(FGA50N100BNT)
EDA Models
1(FGA50N100BNTTU Models)
Menge Preis
-
Stellvertreter
Teil Nr. : GT50N322A
Hersteller. : Toshiba Semiconductor and Storage
Verfügbare Menge. : 2
Einzelpreis. : $4.68000
Ersatztyp. : Direct
Verfügbare Menge. : 2
Einzelpreis. : $4.68000
Ersatztyp. : Direct