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TEILNUMMER DES HERSTELLERS
IRF6611
BESCHREIBUNG
MOSFET N-CH 30V 32A DIRECTFET
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 32A (Ta), 150A (Tc) 3.9W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
4,800
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
32A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.6mOhm @ 27A, 10V
Vgs(th) (Max) @ Id
2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4860 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
3.9W (Ta), 89W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ MX
Package / Case
DirectFET™ Isometric MX
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IRF6611CT
IRF6611TR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6611
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Datasheets
1(IRF6611)
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Menge Preis
-
Stellvertreter
Teil Nr. : PSMN2R5-30YL,115
Hersteller. : Nexperia USA Inc.
Verfügbare Menge. : 2,090
Einzelpreis. : $1.12000
Ersatztyp. : Similar
Verfügbare Menge. : 2,090
Einzelpreis. : $1.12000
Ersatztyp. : Similar