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ChinaSI3812DV-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI3812DV-T1-GE3
BESCHREIBUNG
MOSFET N-CH 20V 2A 6TSOP
DETAILIERTE BESCHREIBUNG
N-Channel 20 V 2A (Ta) 830mW (Ta) Surface Mount 6-TSOP
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
LITTLE FOOT®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
125mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id
600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
4 nC @ 4.5 V
Vgs (Max)
±12V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
830mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-TSOP
Package / Case
SOT-23-6 Thin, TSOT-23-6
Base Product Number
SI3812
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI3812DV-T1-GE3
Dokumente und Medien
PCN Obsolescence/ EOL
1(PCN- SIL-0582013 05/Dec/2013)
PCN Assembly/Origin
1(New Solder Plating Site 18/Apr/2023)
HTML Datasheet
1(SI3812DV)
Menge Preis
-
Stellvertreter
Teil Nr. : SI3442BDV-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 0
Einzelpreis. : $0.21589
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $0.21589
Ersatztyp. : Similar