English
Spain
Rusia
Italy
ChinaMJE181STU
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
MJE181STU
BESCHREIBUNG
POWER BIPOLAR TRANSISTOR, 3A, 60
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 60 V 3 A 50MHz 1.5 W Through Hole TO-126-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,360
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
3 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
1.7V @ 600mA, 3A
Current - Collector Cutoff (Max)
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 100mA, 1V
Power - Max
1.5 W
Frequency - Transition
50MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126-3
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
2156-MJE181STU
ONSFSCMJE181STU
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Fairchild Semiconductor MJE181STU
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 1360
Einzelpreis: $0.22
Verpackung: Bulk
MinMultiplikator: 1360
Verpackung: Bulk
MinMultiplikator: 1360
Stellvertreter
-