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ChinaSQD45N05-20L-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SQD45N05-20L-GE3
BESCHREIBUNG
MOSFET N-CH 50V 50A TO252
DETAILIERTE BESCHREIBUNG
N-Channel 50 V 50A (Tc) 2.5W (Ta), 75W (Tc) Surface Mount TO-252AA
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
50 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
18mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1800 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 75W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
SQD45
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SQD45N05-20L-GE3
Dokumente und Medien
Other Related Documents
1(SQD45N05-20L Part Marking)
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