Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IRF9910TRPBF-1
BESCHREIBUNG
MOSFET 2N-CH 20V 10A/12A 8SOIC
DETAILIERTE BESCHREIBUNG
Mosfet Array 20V 10A (Ta), 12A (Ta) 2W (Ta) Surface Mount 8-SOIC
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
4,000

Technische Daten

Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
10A (Ta), 12A (Ta)
Rds On (Max) @ Id, Vgs
13.4mOhm @ 10A, 10V, 9.3mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11nC @ 4.5V, 23nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
900pF @ 10V, 1860pF @ 10V
Power - Max
2W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
IRF99

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

448-IRF9910TRPBF-1TR
SP001555924

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies IRF9910TRPBF-1

Dokumente und Medien

Datasheets
1(IRF9910TRPbF-1)
HTML Datasheet
1(IRF9910TRPbF-1)

Menge Preis

-

Stellvertreter

Teil Nr. : FDS6898AZ
Hersteller. : onsemi
Verfügbare Menge. : 11,881
Einzelpreis. : $1.20000
Ersatztyp. : Similar