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ChinaIPD350N06LGBUMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPD350N06LGBUMA1
BESCHREIBUNG
MOSFET N-CH 60V 29A TO252-3
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 29A (Tc) 68W (Tc) Surface Mount PG-TO252-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
35mOhm @ 29A, 10V
Vgs(th) (Max) @ Id
2V @ 28µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
800 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
68W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD350N
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IPD350N06LGXT-ND
IPD350N06LGXT
SP000204197
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD350N06LGBUMA1
Dokumente und Medien
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Menge Preis
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Stellvertreter
Teil Nr. : IPD350N06LGBTMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 4,620
Einzelpreis. : $0.88000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 4,620
Einzelpreis. : $0.88000
Ersatztyp. : Parametric Equivalent