English
Spain
Rusia
Italy
ChinaSIHP4N80E-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SIHP4N80E-GE3
BESCHREIBUNG
MOSFET N-CH 800V 4.3A TO220AB
DETAILIERTE BESCHREIBUNG
N-Channel 800 V 4.3A (Tc) 69W (Tc) Through Hole TO-220AB
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
10 Weeks
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
E
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.27Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
622 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
69W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
SIHP4
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHP4N80E-GE3
Dokumente und Medien
Datasheets
1(SIHP4N80E)
PCN Assembly/Origin
1(Mult Dev Material Chg 30/Aug/2019)
HTML Datasheet
1(SIHP4N80E)
Menge Preis
QUANTITÄT: 1000
Einzelpreis: $0.94738
Verpackung: Tube
MinMultiplikator: 1000
Verpackung: Tube
MinMultiplikator: 1000
Stellvertreter
Teil Nr. : SIHP4N80E-BE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 1,000
Einzelpreis. : $2.00000
Ersatztyp. : Direct
Verfügbare Menge. : 1,000
Einzelpreis. : $2.00000
Ersatztyp. : Direct