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TEILNUMMER DES HERSTELLERS
1N8026-GA
BESCHREIBUNG
DIODE SIL CARBIDE 1.2KV 8A TO257
DETAILIERTE BESCHREIBUNG
Diode 1200 V 8A Through Hole TO-257
HERSTELLER
GeneSiC Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
10
Lagerbestände
Technische Daten
Mfr
GeneSiC Semiconductor
Series
-
Package
Tube
Product Status
Obsolete
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
8A
Voltage - Forward (Vf) (Max) @ If
1.6 V @ 2.5 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
10 µA @ 1200 V
Capacitance @ Vr, F
237pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-257-3
Supplier Device Package
TO-257
Operating Temperature - Junction
-55°C ~ 250°C
Base Product Number
1N8026
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.10.0080
Andere Namen
1N8026GA
1242-1113
Kategorie
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/GeneSiC Semiconductor 1N8026-GA
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