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ChinaCY7C1362S-200AXC
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TEILNUMMER DES HERSTELLERS
CY7C1362S-200AXC
BESCHREIBUNG
IC SRAM 9MBIT PARALLEL 100TQFP
DETAILIERTE BESCHREIBUNG
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 200 MHz 3 ns 100-TQFP (14x14)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Bag
Product Status
Obsolete
allaboutcomponents.com Programmable
Not Verified
Memory Type
Volatile
Memory Format
SRAM
Technology
SRAM - Synchronous, SDR
Memory Size
9Mbit
Memory Organization
512K x 18
Memory Interface
Parallel
Clock Frequency
200 MHz
Write Cycle Time - Word, Page
-
Access Time
3 ns
Voltage - Supply
3.135V ~ 3.6V
Operating Temperature
0°C ~ 70°C (TA)
Mounting Type
Surface Mount
Package / Case
100-LQFP
Supplier Device Package
100-TQFP (14x14)
Base Product Number
CY7C1362
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
3A991B2A
HTSUS
8542.32.0041
Andere Namen
2156-CY7C1362S-200AXC-CY
CYPCYPCY7C1362S-200AXC
Kategorie
/Product Index/Integrated Circuits (ICs)/Memory/Memory/Infineon Technologies CY7C1362S-200AXC
Dokumente und Medien
Featured Product
1(Cypress Memory Products)
PCN Assembly/Origin
1(Qualification of Copper Wire 13/Dec/2013)
PCN Packaging
()
Menge Preis
-
Stellvertreter
-