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ChinaFDP039N08B-F102
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDP039N08B-F102
BESCHREIBUNG
MOSFET N-CH 80V 120A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 80 V 120A (Tc) 214W (Tc) Through Hole TO-220-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
64
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
133 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
9450 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
214W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
ONSONSFDP039N08B-F102
2156-FDP039N08B-F102ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDP039N08B-F102
Dokumente und Medien
Datasheets
1(FDP039N08B-F102 Datasheet)
Menge Preis
QUANTITÄT: 64
Einzelpreis: $4.75
Verpackung: Bulk
MinMultiplikator: 64
Verpackung: Bulk
MinMultiplikator: 64
Stellvertreter
-