English
Spain
Rusia
Italy
ChinaIPC218N04N3X7SA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPC218N04N3X7SA1
BESCHREIBUNG
MV POWER MOS
DETAILIERTE BESCHREIBUNG
N-Channel 40 V Surface Mount Die
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™ 3
Package
Bulk
Product Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
50mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 200µA
Vgs (Max)
-
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
Die
Package / Case
Die
Base Product Number
IPC218
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPC218N04N3X7SA1
Dokumente und Medien
Datasheets
1(IPC218N04N3)
Other Related Documents
1(Part Number Guide)
HTML Datasheet
1(IPC218N04N3)
Menge Preis
QUANTITÄT: 6195
Einzelpreis: $1.71875
Verpackung: Bulk
MinMultiplikator: 6195
Verpackung: Bulk
MinMultiplikator: 6195
Stellvertreter
-